BD139 Transistor

BD139 Transistor
Type Designator: BD139

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage
Vcb
: 80 V

Maximum Collector-Emitter Voltage
Vce
: 80 V

Maximum Emitter-Base Voltage
Veb
: 5 V

Maximum Collector Current
Ic max
: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: –

Package: TO126
BD139 Transistor

• Type Designator: BD139

• Material of Transistor: Si

• Polarity: NPN

• Maximum Collector Power Dissipation (Pc): 12 W

• Maximum Collector-Base Voltage |Vcb|: 80 V

• Maximum Collector-Emitter Voltage |Vce|: 80 V

• Maximum Emitter-Base Voltage |Veb|: 5 V

• Maximum Collector Current |Ic max|: 1 A

• Max. Operating Junction Temperature (Tj): 150 °C

• Transition Frequency (ft): 50 MHz

• Forward Current Transfer Ratio (hFE), MIN: 40

• Noise Figure, dB: –

• Package: TO126