BD132 Transistor

Transistor bd132

Type Designator: BD132

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 11 W

Maximum Collector-Base Voltage
Vcb
: 45 V

Maximum Collector-Emitter Voltage
Vce
: 45 V

Maximum Emitter-Base Voltage
Veb
: 4 V

Maximum Collector Current
Ic max
: 3 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: –

Package: TO126Transistor bd132

• Type Designator: BD132

• Material of Transistor: Si

• Polarity: PNP

• Maximum Collector Power Dissipation (Pc): 11 W

• Maximum Collector-Base Voltage |Vcb|: 45 V

• Maximum Collector-Emitter Voltage |Vce|: 45 V

• Maximum Emitter-Base Voltage |Veb|: 4 V

• Maximum Collector Current |Ic max|: 3 A

• Max. Operating Junction Temperature (Tj): 125 °C

• Transition Frequency (ft): 60 MHz

• Forward Current Transfer Ratio (hFE), MIN: 40

• Noise Figure, dB: –

• Package: TO126